Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer

ABSTRACT

Si (1-v-w-x) C w Al x N v  crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si (1-v-w-x) C w Al x N v  substrate, a method for manufacturing an epitaxial wafer, a Si (1-v-w-x) C w Al x N v  substrate, and an epitaxial wafer are provided. A method for manufacturing a Si (1-v-w-x) C w Al x N v  substrate  10   a  includes the following steps. First, a Si substrate  11  is prepared. A Si (1-v-w-x) C w Al x N v  layer  12  (0&lt;v&lt;1, 0&lt;w&lt;1, 0&lt;x&lt;1, and 0&lt;v+w+x&lt;1) is then grown on the Si substrate  11  by a pulsed laser deposition method.

The present invention relates to a method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate, a method for manufacturing anepitaxial wafer, a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate, and anepitaxial wafer.

BACKGROUND ART

Al_((1-y-z))Ga_(y)In_(z)N (0≦y≦1, 0≦z≦1, and 0≦y+z≦1) crystals, such asaluminum nitride (AlN) crystals, having an energy bandgap of 6.2 eV, athermal conductivity of approximately 3.3 WK⁻¹cm⁻¹, and high electricalresistance have been used as materials for semiconductor devices, suchas short-wavelength optical devices and power electronic devices.Conventionally, such crystals have been grown on a base substrate, forexample, by a vapor phase epitaxy method.

Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrates have received attention asbase substrates on which such materials are grown. For example, U.S.Pat. No. 4,382,837 (Patent Literature 1), U.S. Pat. No. 6,086,672(Patent Literature 2), and Japanese Unexamined Patent ApplicationPublication (Translation of PCT Application) No. 2005-506695 (PatentLiterature 3) describe a method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate.

Patent Literature 1 discloses that a raw material is heated at atemperature in the range of 1900° C. to 2020° C. for sublimation,thereby growing (SiC)_((1-x))(AlN)_(x) crystals on Al₂O₃ (sapphire).Patent Literature 2 discloses that a raw material is heated at atemperature in the range of 1810° C. to 2492° C. to grow(SiC)_((1-x))(AlN)_(x) crystals on silicon carbide (SiC) at atemperature in the range of 1700° C. to 2488° C. Patent Literature 3discloses that (SiC)_((1-x))(AlN)_(x) crystals are grown on silicon (Si)at a raw material gas temperature in the range of 550° C. to 750° C. bya molecular-beam epitaxy (MBE) method.

CITATION LIST

Patent Literature

PTL 1: U.S. Pat. No. 4,382,837

PTL 2: U.S. Pat. No. 6,086,672

PTL 3: Japanese Unexamined Patent Application Publication (Translationof PCT Application) No. 2005-506695

SUMMARY OF INVENTION

Technical Problem

In Patent Literatures 1 and 2, however, (SiC)_((1-x))(AlN)_(x) crystalsare grown on an Al₂O₃ substrate and a SiC substrate. Since Al₂O₃substrates and SiC substrates are chemically very stable, it isdifficult to process these substrates by wet etching or the like. Thus,the problem is that it is difficult to decrease the thickness of anAl₂O₃ substrate and a SiC substrate and to remove an Al₂O₃ substrate anda SiC substrate.

(SiC_((1-x))(AlN)_(x) crystals are grown by a sublimation method inPatent Literatures 1 and 2 and by a MBE method in Patent Literature 3.FIGS. 10 and 11 are schematic cross-sectional views of(SiC)_((1-x))(AlN)_(x) crystals grown in Patent Literatures 1 to 3.FIGS. 10 and 11 show that, in a (SiC)_((1-x))(AlN)_(x) layer 112 grownby a sublimation method or a MBE method, SiC layers 112 a and AlN layers112 b are often layered, as illustrated in FIG. 10, or a SiC layer 112 ais often interspersed with aggregated AlN layers 112 b, as illustratedin FIG. 11. Thus, it was found that a mixed crystal state of fourelements Si, carbon (C), aluminum (Al), and nitrogen (N) cannot beformed in a (SiC)_((1-x))(AlN)_(x) layer 112.

In view of the problems described above, it is an object of the presentinvention to form Si_((1-v-w-x))C_(w)Al_(x)N_(v) crystals in a mixedcrystal state and provide a method for manufacturing an easilyprocessable Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate, a method formanufacturing an epitaxial wafer, a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate, and an epitaxial wafer.

Solution to Problem

The present inventor found that the reason thatSi_((1-v-w-x))C_(w)Al_(x)N_(v) crystals in a mixed crystal state couldnot be formed is that the sublimation method and the MBE method growSi_((1-v-w-x))C_(w)Al_(x)N_(v) crystals in an equilibrium state. Thepresent inventor also found that because SiC and AlN are stable in aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown in an equilibrium state, Sibonds to C, and Al bonds to N.

Thus, a method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate according to the present invention includes the followingsteps. First, a Si substrate is prepared. ASi_((1-v-w-x))C_(w)Al_(x)N_(v) layer (0<v<1, 0<w<1, 0<x<1, and0<v+w+x<1) is then grown on the Si substrate by a pulsed laserdeposition (PLD) method.

In accordance with a method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to the presentinvention, a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer (0<v<1, 0<w<1, 0<x<1,and 0<v+w+x<1) is grown by a PLD method. A raw material for theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer can be irradiated with a laser beamto generate plasma. The plasma can be supplied to the surface of the Sisubstrate. Thus, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer can be grownin a non-equilibrium state. Unlike the equilibrium state, this growthcondition is not a stable state. Si can therefore bond to C and N, andAl can bond to C and N. This can grow a Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer formed of a mixed crystal of four elements Si, C, Al, and N.

The Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer is grown on the Si substrate.Si substrates can be easily cleaved and easily etched with an acid. Itis therefore easy to reduce the thickness of a Si substrate or remove aSi substrate. Thus, an easily processable Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate can be manufactured.

Preferably, the method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate described above furtherincludes the step of removing the Si substrate after the growing step.

As described above, the Si substrate can be easily processed. The Sisubstrate can therefore be easily removed. ASi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate that includes no Si substrateand a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer having a reduced number ofcracks can be easily manufactured.

A method for manufacturing an epitaxial wafer according to the presentinvention includes the steps of manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate by any of the methods formanufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate described aboveand growing an Al_((1-y-z))Ga_(y)In_(z)N layer (0≦y≦1, 0≦z ≦1, and 0≦y+z≦1) on the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer.

A Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer in a mixed crystal state can bemanufactured by a method for manufacturing an epitaxial wafer accordingto the present invention. An Al_((1-y-z))Ga_(y)In_(z)N layer havinguniform crystallinity can therefore be grown on theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer. The lattice matching and thermalexpansion coefficient of the Al_((1-y-z))Ga_(y)In_(z)N layer are similarto the lattice matching and thermal expansion coefficient of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer. This can improve the crystallinityof the Al_((1-y-z))Ga_(y)In_(z)N layer. In an epitaxial wafer includinga Si substrate, since the Si substrate can be easily processed, the Sisubstrate can be easily removed from the epitaxial wafer.

A Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to the presentinvention is a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate including aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer (0<v<1, 0<w<1, 0<x<1, and0<v+w+x<1), wherein the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer has adiffraction peak between a SiC diffraction peak and an AlN diffractionpeak, as determined by an X-ray diffraction (XRD) method.

A Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to the presentinvention manufactured by the method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to the presentinvention described above includes a Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer grown in a non-equilibrium state. In theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer, Si bonds to C and N, and Al bondsto C and N. This can grow a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer formedof a mixed crystal of four elements Si, C, Al, and N. Thus, theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer can have a diffraction peak betweena SiC diffraction peak and an AIN diffraction peak.

Preferably, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate furtherincludes a Si substrate having a main surface, and theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer is formed on the main surface ofthe Si substrate.

In the case that the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer has a smallthickness, the Si(_((1-v-w-x))C_(w)Al_(x)N_(v) substrate may furtherinclude a Si substrate if necessary. This is particularly advantageouswhen a Si substrate must be removed from theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer, because the Si substrate can beeasily processed.

An epitaxial wafer according to the present invention includes any ofthe Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrates described above and anAl_((1-y-z))Ga_(y)In_(z)N layer (0≦y≦1, 0z≦1, and 0≦y+z≦1) formed on theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer.

In an epitaxial wafer according to the present invention, anAl_((1-y-z))Ga_(y)In_(z)N layer is formed on aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer in a mixed crystal state. TheAl_((1-y-z))Ga_(y)In_(z)N layer can therefore have uniformcrystallinity. In an epitaxial wafer including a Si substrate, since theSi substrate can be easily processed, the Si substrate can be easilyremoved from the epitaxial wafer.

Advantageous Effects of Invention

In accordance with a method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate, a method for manufacturing anepitaxial wafer, a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate, and anepitaxial wafer according to the present invention, aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer is grown on a Si substrate by a PLDmethod. Thus, an easily processable Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate in a mixed crystal state can be manufactured by growing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer in a non-equilibrium state.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to a first embodimentof the present invention.

FIG. 2 is a schematic view of diffraction peaks in the XRD of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer according to the first embodimentof the present invention.

FIG. 3 is a schematic view of diffraction peaks in the XRD of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer according to the first embodimentof the present invention.

FIG. 4 is a schematic view of diffraction peaks in the XRD of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer according to the first embodimentof the present invention.

FIG. 5 is a schematic view of the arrangement of atoms constituting theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer according to the first embodimentof the present invention.

FIG. 6 is a schematic view of a PLD apparatus for use in the manufactureof a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to the firstembodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a _(Si)_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to a second embodimentof the present invention.

FIG. 8 is a schematic cross-sectional view of an epitaxial waferaccording to a third embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of an epitaxial waferaccording to a fourth embodiment of the present invention.

FIG. 10 is a schematic cross-sectional view of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown in Patent Literatures 1 to 3.

FIG. 11 is a schematic cross-sectional view of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown in Patent Literatures 1 to 3.

FIG. 12 is a schematic view of the diffraction peaks of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown in an equilibrium statemeasured by an XRD method.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention will be described below withreference to the drawings. In the drawings, identical or similarelements are denoted by like references and will not be described again.

First Embodiment

FIG. 1 is a schematic cross-sectional view of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to the presentembodiment. First, a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 aaccording to the present embodiment will be described below withreference to FIG. 1.

As illustrated in FIG. 1, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate10 a according to the present embodiment includes a Si substrate 11 anda Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 (0>v<1, 0<w<1, 0<x<1, and0<v+w+x<1) formed on the main surface 11 a of the Si substrate 11. Inthe Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12, the component ratio 1-v-w-xdenotes the molar ratio of Si, w denotes the molar ratio of C, x denotesthe molar ratio of Al, and v denotes the molar ratio of N.

FIGS. 2 to 4 are schematic views of diffraction peaks of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer according to the present embodimentmeasured by an XRD method. As illustrated in FIGS. 2 to 4, theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 has a diffraction peak between aSiC diffraction peak and an AlN diffraction peak as determined by theXRD method. The diffraction peaks of the materials as determined by theXRD method have their inherent values. For example, under measurementconditions where the target is copper (Cu), the tube voltage is 45 kV,the tube current is 40 mA, the measurement mode is 2θ−ω, and the angularresolution is 0.001 degree step, the diffraction peak of an AlN (002)plane appears at approximately 36.03 degrees, and the diffraction peakof a SiC (102) plane appears at approximately 35.72 degrees.

The diffraction peak between the SiC diffraction peak and the AlNdiffraction peak in the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 ishigher than the SiC and AlN diffraction peaks in FIG. 2 and is lowerthan the SiC and AlN diffraction peaks in FIG. 3. As illustrated in FIG.4, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 may have only adiffraction peak between the SiC diffraction peak and the AlNdiffraction peak without the SiC and AlN diffraction peaks. Thediffraction peak between the SiC diffraction peak and the AlNdiffraction peak in the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 has sucha height that the diffraction peak is not a noise peak, indicating thepresence of a mixed crystal of Si, C, Al, and N.

FIG. 5 is a schematic view of the arrangement of atoms constituting theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer according to the presentembodiment. In general, Si is chemically stable as SiC and thereforeeasily bonds to C and rarely bonds to N. Al is chemically stable as AlNand therefore easily bonds to N and rarely bonds to C. In theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12, however, Si bonds to C and N,and Al bonds to C and N, as illustrated in FIG. 5. Thus, theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 does not aggregate as SiC andAlN, and Si, Al, C, and N are dispersed at the atomic level.

The numbers of cracks each having a size of 1 mm or more in an area 10mm square of the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 are seven orless for 1>v+x>0.5, five or less for 0.5≧v+x>0.1, and three or less for0.1≧v+x>0, wherein v+x denotes the molar ratio of AlN.

The phrase “cracks each having a size of 1 mm or more”, as used herein,refers to the total length of one continuous crack in the longitudinaldirection.

A method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10a according to the present embodiment will be described below withreference to FIG. 6. FIG. 6 is a schematic view of a PLD apparatus foruse in the manufacture of the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrateaccording to the present embodiment.

The main structure of a PLD apparatus 100 will be described below withreference to FIG. 6. As illustrated in FIG. 6, the PLD apparatus 100includes a vacuum chamber 101, a laser source 102, a raw material 103, astage 104, a pulse motor 105, a substrate holder 106, a heater (notshown), a controller 107, a reflection high energy electrondiffractometer (RHEED) 108, and a gas-supply unit 109.

The laser source 102 is disposed outside the vacuum chamber 101. Thelaser source 102 can emit a laser beam. The target raw material 103 canbe placed in the vacuum chamber 101 such that the raw material 103 canbe irradiated with a laser beam from the laser source 102. The rawmaterial 103 can be mounted on the stage 104. The pulse motor 105 candrive the stage 104. The substrate holder 106 can hold the Si substrate11 as a base substrate. The heater heats the Si substrate 11 in thesubstrate holder 106. The controller 107 can control the operation ofthe laser source 102 and the pulse motor 105. The RHEED 108 can monitoroscillations to determine the thickness of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown on the Si substrate 11.The gas-supply unit 109 can supply a gas into the vacuum chamber 101.

The PLD apparatus 100 may include other components. However, forconvenience of explanation, these components are not illustrated ordescribed.

First, the raw material 103 for the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer12 is prepared. For example, the raw material 103 is a sintered compactof a mixture of SiC and AlN. The composition v+x of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 can depend on the molar ratio ofSiC to AlN in the raw material 103. The raw material 103 thus preparedis placed on the stage 104 in FIG. 6.

The Si substrate 11 is placed on the surface of the substrate holder 106in the vacuum chamber 101 such that the Si substrate 11 faces the rawmaterial 103.

The surface of the Si substrate 11 is then heated to a temperature, forexample, below 550° C. The surface temperature of the Si substrate 11 ispreferably below 550° C., more preferably 540° C. or less. This heatingis performed, for example, with a heater. A method for heating the Sisubstrate 11 is not limited to a heater and may be another method, forexample, the application of an electric current.

The raw material 103 is then irradiated with a laser beam from the lasersource 102. The laser may be krypton fluoride (KrF) excimer laser havingan emission wavelength of 248 nm, a pulse repetition frequency of 10 Hz,and a pulse energy in the range of 1 to 3 J/shot. Another laser, such asargon fluoride (ArF) excimer laser having an emission wavelength of 193nm, may also be used.

The vacuum chamber 101 can be evacuated to a pressure in the range ofapproximately 1×10⁻³ to 1×10⁻⁶ Torr or less, for example. The vacuumchamber 101 is then filled with an inert gas, such as argon (Ar), ornitrogen from the gas-supply unit 109. The nitrogen atmosphere in thevacuum chamber 101 can supply nitrogen during the growth of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12. In the inert gas atmosphere inthe vacuum chamber, only the raw material 103 is used in the growth ofthe Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12. This facilitates thecontrol of v+x.

The raw material 103 is preferably irradiated with a laser beam having ashort wavelength as described above. Use of a short-wavelength laserbeam increases the absorption coefficient, allowing most of the laserbeam to be absorbed in the vicinity of the surface of the raw material103. This can markedly increase the surface temperature of the rawmaterial 103, generating ablation plasma (plume) in the vacuum chamber101. Ablation plasma is plasma accompanied by explosive particleemission from a solid. Ablation particles in the plasma move to the Sisubstrate 11 while the state of the ablation particles alters byrecombination, collision with ambient gas, a reaction, or the like. Theparticles reaching the Si substrate 11 diffuse over the Si substrate 11and enter acceptor sites to form the Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer 12.

The following are acceptor sites for the particles. The acceptor sitefor an Al atom is a C or N atom binding site. The acceptor site for a Siatom is a C or N atom binding site. The acceptor site for a C atom is anAl or Si atom binding site. The acceptor site for a N atom is an Al orSi atom binding site.

The thickness of the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 to be growncan be monitored through the oscillation of the RHEED 108 installed onthe vacuum chamber 101.

Through the steps described above, the Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer 12 can be grown on the Si substrate 11 by a PLD method tomanufacture the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 aillustrated in FIG. 1.

As described above, a method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a according to the presentembodiment includes the steps of preparing the Si substrate 11 andgrowing the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 (0<v<1, 0<w<1,0<x<1, and 0<v+w+x<1) on the Si substrate 11 by a PLD method.

In accordance with a method for manufacturing a _(Si)_((l-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a according to the presentinvention, the Si_((l-v-w-x))C_(w)Al_(x)N_(v) layer 12 is grown by a PLDmethod. The raw material 103 for the Si_((l-v-w-x))C_(w)Al_(x)N_(v)layer 12 can be irradiated with a laser beam to generate plasma. Theplasma can be supplied onto the Si substrate 11. Thus, theSi_((l-v-w-x)) C_(w)Al_(x)N_(v) layer 12 can be grown in anon-equilibrium state. Unlike the equilibrium state, thisnon-equilibrium state is not a stable state. Si can therefore bond to Cand N, and Al can bond to C and N. Unlike conventionalSi_((l-v-w-x))C_(w)Al_(x)N_(v) layers 112 illustrated in FIGS. 10 and11, the Si_((l-v-w-x))C_(w)Al_(x)N_(v) layer 12 formed of a mixedcrystal of four elements Si, C, Al, and N as illustrated in FIG. 5 canbe grown.

The Si substrate 11 is used as a base substrate for theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12. The Si substrate 11 is the mostcommonly used electronic material, and therefore processing techniques,such as etching, have been established for the Si substrate 11. The Sisubstrate 11 can be easily cleaved and easily etched with an acid. It istherefore easy to reduce the thickness of the Si substrate 11 or removethe Si substrate 11. When the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate10 a is used in the manufacture of a light-emitting device, thecleavability of the Si substrate is very important. Thus, the easilyprocessable Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a can bemanufactured.

The Si substrate 11 is used as a base substrate. The Si substrate 11 isless expensive than SiC substrates and sapphire substrates. This canreduce the manufacturing costs of the Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate 10 a.

The method for growing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 aaccording to the present embodiment in which aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 is grown by a PLD method canprovide a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a including aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 having a diffraction peakbetween a SiC diffraction peak and an AlN diffraction peak as determinedby an XRD method.

The diffraction peaks of a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown inan equilibrium state, for example, by a conventional sublimation or MBEmethod will be described below with reference to FIG. 12. FIG. 12 is aschematic view of the diffraction peaks of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown in an equilibrium statemeasured by an XRD method. More specifically, FIG. 12 is a schematicview of the diffraction peaks of a (SiC)_((1-x))(AlN)_(x) layer 112illustrated in FIG. 10 or 11 as determined by an XRD method. Asillustrated in FIGS. 10 and 11, the (SiC)_((1-x))(AlN)_(x) layer 112grown in an equilibrium state, for example, by a sublimation method or aMBE method does not have a mixed crystal state of four elements Si, C,Al, and N. Thus, in measurement by an XRD method, as illustrated in FIG.12, although a SiC diffraction peak and an AlN diffraction peak areobserved, no diffraction peak is observed between the SiC diffractionpeak and the AlN diffraction peak. A diffraction peak within the limitsof error, such as noise, may be observed between the SiC diffractionpeak and the AlN diffraction peak.

The Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown by the PLD method canbe the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 in a mixed crystal stateof four elements Si, C, Al, and N, as illustrated in FIG. 5. Thus, theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a including theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 that has a diffraction peakbetween the SiC diffraction peak and the AlN diffraction peak asdetermined by an XRD method, as illustrated in FIGS. 2 to 4, can bemanufactured.

The Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a manufactured by amethod for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 aaccording to the present embodiment can therefore be easily processedand has improved uniformity of crystal. TheSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a can be suitably used invarious functional devices that utilize the magnetoresistance effect,such as tunneling magnetoresistive devices and giant magnetoresistivedevices; light-emitting devices, such as light-emitting diodes and laserdiodes; electronic devices, such as rectifiers, bipolar transistors,field-effect transistors (FETs), spin FETs, and high-electron-mobilitytransistors (HEMTs); semiconductor sensors, such as temperature sensors,pressure sensors, radiation sensors, and visible-ultraviolet lightdetectors; and SAW devices.

In the method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate 10 a, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 ispreferably grown at a temperature below 550° C. in the growing step. Thepresent inventor found that the growth of the _(Sio-v-w-x))_(CwAlxNv)layer 12 at a temperature below 550° C. can reduce the stress arising inthe Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 due to a difference inthermal expansion coefficient between the Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer 12 and the Si substrate 11 while theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 is cooled to room temperatureafter the growth of the Si_((1-v-w-x-))C_(w)Al_(x)N_(v) layer 12. Inother words, the present inventor found that the stress arising in theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 at a growth temperature below550° C. can prevent cracks from occurring in theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12. This can reduce the number ofcracks in the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12.

In particular, in accordance with a conventional way, it is difficult togrow the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 using the Si substrate11 as a base substrate because the growth temperature of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 is high. The growth of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 at a low temperature below 550°C. can prevent the thermal degradation of the Si substrate 11. Thus, theSi₍ _(1-v-w-x))C_(w)Al_(x)N_(v) layer 12 can be grown on the Sisubstrate 11.

The method for growing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 aincluding growing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 at atemperature below 550° C. according to the present embodiment canprovide the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a having theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 in which the numbers of crackseach having a size of 1 mm or more in an area 10 mm square of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer are seven or less for 1>v+x>0.5,five or less for 0.5≧v+x>0.1, and three or less for 0.1≧v+x>0.

Second Embodiment

FIG. 7 is a schematic cross-sectional view of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according to a secondembodiment of the present invention. With reference to FIG. 7, in aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b according to the presentembodiment, at least the Si substrate 11 is removed from theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a according to the firstembodiment.

A method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10b according to the present embodiment will be described below.

First, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a illustrated inFIG. 1 is manufactured by the method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a according to the firstembodiment.

The Si substrate 11 is then removed. Only the Si substrate 11 may beremoved, or the Si substrate 11 and part of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 including the surface in contactwith the Si substrate 11 may be removed.

The removal can be performed by any method, for example, chemicalremoval, such as etching, or mechanical removal, such as cutting,grinding, or cleavage. Cutting refers to the mechanical removal of atleast the Si substrate 11 from the Si_((1-v-w-x))C_(w)Al_(x)N_(y) layer12 with a slicer having a peripheral cutting edge of an electrodepositeddiamond wheel. Grinding refers to applying a rotating whetstone to asurface to scrape the surface in the thickness direction. Cleavagerefers to cleaving the Si substrate 11 along the crystal lattice plane.

As described above, a method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b according to the presentembodiment further includes the step of removing the Si substrate 11.Since the Si substrate 11 can be easily removed, theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b, for example, includingthe Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 alone can be easilymanufactured.

Third Embodiment

FIG. 8 is a schematic cross-sectional view of an epitaxial waferaccording to the present embodiment. An epitaxial wafer 20 a accordingto the present embodiment will be described below with reference to FIG.8.

As illustrated in FIG. 8, the epitaxial wafer 20 a includes theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a according to the firstembodiment and an Al_((1-x))(Ga_(y)In_(z)N (0≦y≦1, 0≦z≦1, and 0 ≦y+z≦1)layer 21 formed on the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a. Inother words, the epitaxial wafer 20 a includes the Si substrate 11, theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 formed on the Si substrate 11,and the Al_((1-y-z))Ga_(y)In_(z)N layer 21 formed on theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12.

A method for manufacturing an epitaxial wafer 20 a according to thepresent embodiment will be described below.

First, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a is manufacturedby the method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate 10 a according to the first embodiment.

The Al_((1-y-z))Ga_(y)In_(z)N layer 21 is then grown on theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a (theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 in the present embodiment).Examples of the growth method include, but not limited to, vapor phaseepitaxy methods, such as an MOCVD method, a hydride vapor phase epitaxy(HVPE) method, an MBE method, and a sublimation method, and liquid phaseepitaxy methods.

Through these steps, the epitaxial wafer 20 a illustrated in FIG. 8 canbe manufactured. A step of removing the Si substrate 11 from theepitaxial wafer 20 a may be further performed.

As described above, in accordance with the epitaxial wafer 20 a and themethod for manufacturing an epitaxial wafer 20 a according to thepresent embodiment, the Al_((l-y- z))Ga_(y)In_(z)N layer 21 is formed onthe Si_((l-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a. TheSi_((l-v-w-x))C_(w)Al_(x)N_(v)substrate 10 a includes theSi_((l-v-w-x)C) _(w)Al_(x)N_(v) layer 12 in a mixed crystal state. AnAl_((l-y-z))Ga_(y)In_(z)N layer 21 having uniform crystallinity cantherefore be grown on the Si_((l-v-w-x))C_(w)Al_(x)N_(v) layer 12.Furthermore, because differences in lattice matching and thermalexpansion coefficient between the Al_((l-y-z))Ga_(y)In_(z)N layer andthe Si_((l-v-w-x))C_(w)Al_(x)N_(v) layer 12 are small, theAl_((l-y-z))Ga_(y)In_(z)N layer 21 can have improved crystallinity. Inan epitaxial wafer including the Si substrate 11, since the Si substrate11 can be easily processed, the Si substrate 11 can be easily removedfrom the epitaxial wafer.

Fourth Embodiment

FIG. 9 is a schematic cross-sectional view of an epitaxial waferaccording to the present embodiment. An epitaxial wafer 20 b accordingto the present embodiment will be described below with reference to FIG.9.

As illustrated in FIG. 9, the epitaxial wafer 20 b includes theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b according to the secondembodiment and an Al_((1-y-z))Ga_(y)In_(z)N (0≦y≦1, 0≦z≦1, and 0≦y+z≦1)layer 21 formed on the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b. Inother words, the epitaxial wafer 20 b includes theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 and theAl_((1-y-z))Ga_(y)In_(z)N layer 21 formed on theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12.

A method for manufacturing an epitaxial wafer 20 b according to thepresent embodiment will be described below.

First, the Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b is manufacturedby the method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate 10 b according to the second embodiment.

The Al_((1-y-z))Ga_(y)In_(z)N layer 21 is then grown on theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b (theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 in the present embodiment) as inthe third embodiment.

Through these steps, the epitaxial wafer 20 b illustrated in FIG. 9 canbe manufactured.

As described above, in accordance with the epitaxial wafer 20 b and themethod for manufacturing an epitaxial wafer 20 b according to thepresent embodiment, the Al_((1-y-z))Ga_(y)In_(z)N layer 21 is formed onthe Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b. Since theSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 b includes theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 in a mixed crystal state, theAl_((1-y-z))Ga_(y)In_(z)N layer 21 having uniform crystallinity can begrown.

EXAMPLE 1

The effects of the growth of a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer on aSi substrate was studied in the present example.

WORKING EXAMPLE 1

In Working Example 1, a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 awas basically manufactured by the method for manufacturing aSi_((1-v-w-x))C_(w)Al_(x)N_(v) substrate 10 a according to the firstembodiment with a PLD apparatus illustrated in FIG. 6.Si_(0.05)C_(0.05)(AlN)_(0.9) wherein v+x was 0.9 was produced as aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12.

More specifically, the raw material 103 for aSi_(0.05)C_(0.05)(AlN)_(0.9) layer 12 was first prepared. The rawmaterial 103 was prepared in the following way. More specifically, a SiCpowder and an AlN powder were mixed and pressed. This mixture was placedin a vacuum vessel. After the vacuum vessel was evacuated to 10⁻⁶ Torr,the atmosphere was filled with a high-purity Ar gas. The mixture wasthen fired at 2300° C. for 20 hours to prepare the raw material 103. Theraw material 103 was placed on the stage 104 illustrated in FIG. 6.

A Si substrate 11 was then prepared as a base substrate. The Sisubstrate 11 had a (001) plane as a main surface 11 a and a size of oneinch. The Si substrate 11 was placed on the surface of a substrateholder 106 in a vacuum chamber 101 such that the Si substrate 11 facedthe raw material 103.

The surface of the Si substrate 11 was then heated to a temperature of540° C. The raw material 103 was then irradiated with a laser beam froma laser source 102. The laser was KrF excimer laser having an emissionwavelength of 248 nm, a pulse repetition frequency of 10 Hz, and a pulseenergy in the range of 1 to 3 J/shot.

In this process, the vacuum chamber 101 was evacuated to 1×10⁻⁶ Torr andwas then filled with nitrogen.

The Si_(0.05)C_(0.05)(AlN)_(0.9) layer 12 having a thickness of 500 nmwas grown while monitoring the thickness through the oscillation of aRHEED 108 installed on the vacuum chamber 101.

Through the steps described above, a Si_(0.05)C_(0.05)(AlN)_(0.9)substrate 10 a illustrated in FIG. 1 was manufactured.

COMPARATIVE EXAMPLE 1

In Comparative Example 1, a Si_(0.05)C_(0.05)(AlN)_(0.9) substrate wasmanufactured basically in the same manner as in Working Example 1 exceptthat the Si substrate serving as a base substrate was replaced with asapphire substrate having a (0001) main surface.

COMPARATIVE EXAMPLE 2

In Comparative Example 2, a Si_(0.05)C_(0.05)(AlN)_(0.9) substrate wasmanufactured basically in the same manner as in Working Example 1 exceptthat the Si substrate serving as a base substrate was replaced with a6H-SiC substrate having a (0001) main surface.

Measurement Method

The etching characteristics with a hydrogen fluoride (HF) and nitricacid (HNO₃) mixture and potassium hydroxide (KOH) and the cleavabilityof the base substrate of the Si_(0.05)C_(0.05)(AlN)_(0.9) substrateaccording to Working Example 1, Comparative Example 1, and ComparativeExample 2 were examined.

Table I shows the results. In Table I, “Pass” means that the basesubstrate was successfully removed, and “Fail” means that the basesubstrate was not successfully removed.

TABLE I Base substrate HF + HNO₃ KOH Cleavability Working Si (001) PassPass Pass Example 1 Comparative Al₂O₃ (0001) Fail Fail Fail Example 1Comparative 6H—SiC (0001) Fail Fail Pass Example 2

Measurements

Table I shows that the Si_(0.05)C_(0.05)(AlN)_(0.9) substrate accordingto Working Example 1, which used the Si substrate as the base substrate,exhibited excellent etching characteristics and cleavability of the Sisubstrate. This showed that the Si substrate could be easily processed.

In contrast, the Si_(0.05)C_(0.05)(AlN)_(0.9) substrate according toComparative Example 1, which used the sapphire substrate as the basesubstrate, exhibited poor etching characteristics and cleavability ofthe sapphire substrate. The sapphire substrate was therefore notsufficiently removed.

The Si_(0.05)C_(0.05)(AlN)_(0.9) substrate according to ComparativeExample 2, which used the SiC substrate as the base substrate, exhibitedpoor etching characteristics of the SiC substrate. The SiC substrate wastherefore not sufficiently removed by etching.

Thus, the present example showed that a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate that can be easily processed can be manufactured using a Sisubstrate.

EXAMPLE 2

The effects of the growth of a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer at atemperature below 550° C. was studied in the present example.

WORKING EXAMPLE 2

In Working Example 2, Si_(0.05)C_(0.05)Al_(0.45)N_(0.45) was grownbasically in the same manner as in Working Example 1 except that a Sisubstrate 11 having a (111) main surface was used as the base substrate.

WORKING EXAMPLE 3

Working Example 3 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.0005)C_(0.0005)Al_(0.4994)N_(0.4996). This change was achieved byaltering the molar ratio of the AlN powder to the SiC powder in the rawmaterial 103 prepared.

WORKING EXAMPLE 4

Working Example 4 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.0005)C_(0.0005)Al_(0.4996)N_(0.4994).

WORKING EXAMPLE 5

Working Example 5 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.0005)C_(0.0005)Al_(0.4995)N_(0.4995).

WORKING EXAMPLE 6

Working Example 6 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.0006)C_(0.0004)Al_(0.4995)N_(0.4995).

WORKING EXAMPLE 7

Working Example 7 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.0004)C_(0.0006)Al_(0.4995)N_(0.4995).

WORKING EXAMPLE 8

Working Example 8 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.005)C_(0.005)Al_(0.495)N_(0.495).

WORKING EXAMPLE 9

Working Example 9 was basically the same as Working Example 1 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.25)C_(0.25)Al_(0.25)N_(0.25).

WORKING EXAMPLE 10

Working Example 10 was basically the same as Working Example 1 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.45)C_(0.45)Al_(0.05)N_(0.05).

WORKING EXAMPLE 11

Working Example 11 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.495)C_(0.495)Al_(0.005)N_(0.005).

WORKING EXAMPLE 12

Working Example 12 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v), layer 12 grown wasSi_(0.4995)C_(0.4995)Al_(0.0004)N_(0.0006).

WORKING EXAMPLE 13

Working Example 13 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.4995)C_(0.4995)Al_(0.0006)N_(0.0004).

WORKING EXAMPLE 14

Working Example 14 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.4995)C_(0.4995)Al_(0.0005)N_(0.0005).

WORKING EXAMPLE 15

Working Example 15 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.4996)C_(0.4994)Al_(0.0005)N_(0.0005).

WORKING EXAMPLE 16

Working Example 16 was basically the same as Working Example 2 exceptthat the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer 12 grown wasSi_(0.4994)C_(0.4996)Al_(0.0005)N_(0.0005).

WORKING EXAMPLE 17

Working Example 17 was basically the same as Working Example 2 exceptthat the Si_(0.05)C_(0.05)Al_(0.45)N_(0.45) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 18

Working Example 18 was basically the same as Working Example 2 exceptthat a Si_(0.0005)C_(0.0005)Al_(0.4994)N_(0.4996) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 19

Working Example 19 was basically the same as Working Example 2 exceptthat a Si_(0.0005)C_(0.0005)Al_(0.4996)N_(0.4994) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 20

Working Example 20 was basically the same as Working Example 2 exceptthat a Si_(0.0005)C_(0.0005)Al_(0.4995)N_(0.4995) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 21

Working Example 21 was basically the same as Working Example 2 exceptthat a Si_(0.0006)C_(0.0004)Al_(0.4995)N_(0.4995) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 22

Working Example 22 was basically the same as Working Example 2 exceptthat a Si_(0.0004)C_(0.0006)Al_(0.4995)N_(0.4995) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 23

Working Example 23 was basically the same as Working Example 2 exceptthat a Si_(0.005)C_(0.005)Al_(0.495)N_(0.495) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 24

Working Example 24 was basically the same as Working Example 2 exceptthat a Si_(0.25)C_(0.25)Al_(0.25)N_(0.25) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 25

Working Example 25 was basically the same as Working Example 2 exceptthat a Si_(0.45)C_(0.45)Al_(0.05)N_(0.05) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 26

Working Example 26 was basically the same as Working Example 2 exceptthat a Si_(0.495)C_(0.495)Al_(0.005)N_(0.005) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 27

Working Example 27 was basically the same as Working Example 2 exceptthat a Si_(0.4995)C_(0.4995)Al_(0.0004)N_(0.0006) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 28

Working Example 28 was basically the same as Working Example 2 exceptthat a Si_(0.4995)C_(0.4995)Al_(0.0006)N_(0.0004) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 29

Working Example 29 was basically the same as Working Example 2 exceptthat a Si_(0.4995)C_(0.4995)Al_(0.0005)N_(0.0005) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 30

Working Example 30 was basically the same as Working Example 2 exceptthat a Si_(0.4996)C_(0.4994)Al_(0.0005)N_(0.0005) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

WORKING EXAMPLE 31

Working Example 31 was basically the same as Working Example 2 exceptthat a Si_(0.4994)C_(0.4996)Al_(0.0005)N_(0.0005) layer was grown at atemperature of the main surface of the Si substrate of 550° C.

COMPARATIVE EXAMPLE 3

Comparative Example 3 was basically the same as Working Example 2 exceptthat an AlN layer was grown at a temperature of the main surface of theSi substrate of 540° C.

COMPARATIVE EXAMPLE 4

Comparative Example 4 was basically the same as Working Example 2 exceptthat an AlN layer was grown at a temperature of the main surface of theSi substrate of 550° C.

COMPARATIVE EXAMPLE 5

Comparative Example 5 was basically the same as Working Example 2 exceptthat a SiC layer was grown at a temperature of the main surface of theSi substrate of 540° C.

COMPARATIVE EXAMPLE 6

Comparative Example 6 was basically the same as Working Example 2 exceptthat a SiC layer was grown at a temperature of the main surface of theSi substrate of 550° C.

Measurement Method

The number of cracks in a region 10 mm square of theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer, the AlN layer, and the SiC layerin Working Examples 2 to 31 and Comparative Examples 3 to 6 was countedunder an optical microscope. Cracks each having a total length of 1 mmor more in the longitudinal direction were counted, and cracks eachhaving a total length below 1 mm were not counted. Table II shows theresults.

TABLE II Si_(0.0005) Si_(0.0005) Si_(0.0005) Si_(0.0006) Si_(0.0004)Si_(0.005) Si_(0.05) Si_(0.25) Substrate C_(0.0005) C_(0.0005)C_(0.0005) C_(0.0004) C_(0.0006) C_(0.005) C_(0.05) C_(0.25) temperatureAl_(0.4994) Al_(0.4996) Al_(0.4995) Al_(0.4995) Al_(0.4995) Al_(0.495)Al_(0.45) Al_(0.25) (° C.) AlN N_(0.4996) N_(0.4994) N_(0.4995)N_(0.4995) N_(0.4995) N_(0.495) N_(0.45) N_(0.25) 550 10 8 8 8 8 8 8 8 6540 10 7 7 7 7 7 7 7 5 Si_(0.45) Si_(0.495) Si_(0.4995) Si_(0.4995)Si_(0.4995) Si_(0.4996) Si_(0.4994) Substrate C_(0.45) C_(0.495)C_(0.4995) C_(0.4995) C_(0.4995) C_(0.4994) C_(0.4996) temperatureAl_(0.05) Al_(0.005) Al_(0.0004) Al_(0.0006) Al_(0.0005) Al_(0.0005)Al_(0.0005) (° C.) N_(0.05) N_(0.005) N_(0.0006) N_(0.0004) N_(0.0005)N_(0.0005) N_(0.0005) SiC 550 4 4 4 4 4 4 4 2 540 3 3 3 3 3 3 3 2

Measurements

Table II shows that the number of cracks in theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer in which v+x was 0.9, 0.999, or0.99 grown at 540° C. in Working Examples 2 to 8 was seven. In contrast,the number of cracks in the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer inwhich v+x was 0.9, 0.999, or 0.99 grown at 550° C. in ComparativeExamples 17 to 23 was eight.

The number of cracks in the Si_(0.25)C_(0.25)Al_(0.25)N_(0.25) layergrown at 540° C. in Working Example 9 was five. In contrast, the numberof cracks in the Si_(0.25)C_(0.25)Al_(0.25)N_(0.25) layer, which had thesame composition as in Working Example 5, grown at 550° C. inComparative Example 24 was six.

The number of cracks in the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer inwhich v+x was 0.1, 0.01, or 0.001 grown at 540° C. in Working Examples10 to 16 was three. In contrast, the number of cracks in theSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer in which v+x was 0.1, 0.01, or0.001 grown at 550° C. in Comparative Examples 25 to 31 was four.

Thus, it was found that in the growth of aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer having a certain composition(0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1), the growth temperature below 550°C. resulted in a reduced number of cracks.

A Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer having a larger v+x has a largerdifference in composition from the Si substrate 11, resulting in anincreased number of cracks. Table II shows that the numbers of cracks ina Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer grown at 540° C. were seven orless for 1>v+x>0.5, five or less for 0.5≧v+x>0.1, and three or less for0.1≧v+x>0.

Comparative Examples 3 and 4 where AlN was grown at 540° C. and 550° C.had the same number of cracks, that is, ten. Comparative Examples 5 and6 where SiC was grown at 540° C. and 550° C. had the same number ofcracks, that is, two. These results show that aSi_((1-v-w-x))C_(w)Al_(x)N_(v) layer having v+x=0 or v+x=1 could notreduce the number of cracks even at a growth temperature below 550° C.

Thus, the present example showed that a Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer (0<v+x<1) grown at a temperature below 550° C. can reduce thenumber of cracks in the Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer (0<v+x<1).

Although the embodiments and examples of the present invention have beendescribed, combinations of features of the embodiments and examples werealso originally envisaged. It is to be understood that the embodimentsand examples disclosed herein are illustrated by way of example and notby way of limitation in all respects. The scope of the present inventionis defined by the appended claims rather than by the embodimentsdescribed above. All changes that fall within the scope of the claimsand the equivalence thereof are therefore intended to be embraced by theclaims.

Reference Signs List 10a, 10b Si_((l-v-w-x))C_(w)Al_(x)N_(v) substrate11 Si substrate 11a Main surface 12 Si_((l-v-w-x))C_(w)Al_(x)N_(v) layer20a, 20b epitaxial wafer 21 Al_((l-y-z))Ga_(y)In_(z)N layer 100 PLDapparatus 101 Vacuum chamber 102 Laser source 103 Raw material 104 Stage105 Pulse motor 106 Substrate holder 107 Controller 109 Gas-supply unit

1. A method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate, comprising the steps of: preparing a Si substrate; andgrowing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) layer (0<v<1, 0<w<1, 0<x<1, and0<v+w+x<1) on the Si substrate by a pulsed laser deposition method,wherein the Si(₁-_(v)-_(w)-_(x))C_(w)Al_(x)N_(v) layer is grown in amixed crystal layer state, and wherein the Sio-_(v)-_(w)-x)C,Al_(x)N_(v)layer has a composition range 0.001 ≦v+x≦0.1.
 2. The method formanufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v) substrate according toclaim 1, further comprising the step of removing the Si substrate afterthe growing step.
 3. A method for manufacturing an epitaxial wafer,comprising the steps of: manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate by a method for manufacturing a Si_((1-v-w-x))C_(w)Al_(x)N_(v)substrate according to claim 1; and growing an Al_((1-y-z))Ga_(y)In_(z)Nlayer (0≦y≦1, 0≦z≦1, and 0≦y+z≦1) on the Si_((1-v-w-x))C_(w)Al_(x)N_(v)layer.